PART |
Description |
Maker |
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
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Continental Device India Limited
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IRFS17N20D IRFB17N20D |
Power MOSFET(Vdss=200V/ Rds(on)max=0.17ohm/ Id=16A) Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.17ohm,身份证\u003d 16A条)
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IRF International Rectifier, Corp.
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FRM9250H FRM9250R FRM9250D FN3267 |
16A/ -200V/ 0.300 Ohm/ Rad Hard/ P-Channel Power MOSFETs 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
|
RCJ160N20 |
Nch 200V 16A Power MOSFET
|
Rohm
|
IRFS17N20D |
Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
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Fairchild Semiconductor International Rectifier
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
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International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
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U16C15 U16C05 U16C10 U16C20 |
FAST RECTIFIERS(16A,50-200V) FAST RECTIFIERS(16A/50-200V)
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MOSPEC[Mospec Semiconductor]
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OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SINGLE ISOLATED RECTIFIER IN HERMETIC 200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier List of Unclassifed Manufacturers ETC[ETC]
|
MJH11017-D MJH11018 MJH11019 |
Complementary Darlington Silicon Power Transistors Power 15A 150V PNP Power 20A 150V Darlington NPN Power 20A 200V Darlington PNP
|
ON Semiconductor
|
ZXTP23015CFHTA ZETEXSEMICONDUCTOR-ZXTP23015CFH07 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 15V, SOT23, PNP medium power transistor 5000 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
16SYQ060C |
16A 60V Hi-Rel Schottky Discrete Diode in a TO-257AA package SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES
|
IRF[International Rectifier]
|
STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based) Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
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Atmel, Corp.
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